Prospects of SiGe heterodevicesKASPER, E.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 921-925, issn 0022-0248, 2Conference Paper

Heteroepitaxy and characterization of CuInSe₂ on GaAs(001)NIKI, S; MAKITA, Y; CHICHIBU, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1201-1205, issn 0022-0248, 2Conference Paper

Ferroelectric phase transition in BaTiO₃ filmsYONEDA, Y; KASATANI, H; TERAUCHI, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1090-1093, issn 0022-0248, 2Conference Paper

ZnMgSSe based laser diodesITOH, S; ISHIBASHI, A.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 701-706, issn 0022-0248, 2Conference Paper

The growth and properties of group III nitridesFOXON, C. T; CHENG, T. S; TRET'YAKOV, V. V et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 892-896, issn 0022-0248, 2Conference Paper

Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substratesHIGGS, V; LIGHTOWLERS, E. C; USAMI, N et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1070-1073, issn 0022-0248, 2Conference Paper

Elastic anomalies in single crystal copper/nickel superlattices grown by molecular beam epitaxySAKAUE, K; SANO, N; TERAUCHI, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1154-1158, issn 0022-0248, 2Conference Paper

Formation of InSb nanocrystals on Se-terminated GaAs(001)WATANABE, Y; MAEDA, F; OSHIMA, M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 863-867, issn 0022-0248, 2Conference Paper

Resonant-tunneling triangular-barrier optoelectronic switch by gas source molecular beam epitaxySAKATA, H; UTAKA, K; MATSUSHIMA, Y et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1389-1394, issn 0022-0248, 2Conference Paper

Blue luminescent SrGa₂S₄:Ce thin films grown by molecular beam epitaxyTANAKA, K; INOUE, Y; OKAMOTO, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1211-1214, issn 0022-0248, 2Conference Paper

Characterization of termination layer of SiGe system through signatures of Si-O and Ge-O speciesPRABHAKARAN, K; OGINO, T.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1020-1024, issn 0022-0248, 2Conference Paper

Gold growth on Si(111) √3×√3 Ag and √3×√3 Au surfacesICHIMIYA, A; NOMURA, H; ITO, Y et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1169-1174, issn 0022-0248, 2Conference Paper

Luminescence of strained Si_1-xGe_x/Si quantum wells and microstructuresFUKATSU, S; SHIRAKI, Y.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1025-1032, issn 0022-0248, 2Conference Paper

Magnetic superlattices : molecular beam epitaxial growth and properties of artificially and naturally-layered structuresFARROW, R. F. C; MARKS, R. F; CEBOLLADA, A et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1126-1131, issn 0022-0248, 2Conference Paper

Preparation of BaBiO₃ thin films using an oxygen radical beam sourceIYORI, M; SUZUKI, S; YAMANO, K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1086-1089, issn 0022-0248, 2Conference Paper

Reflection high-energy electron diffraction study of the heterointerface formation of ZnSe/ZnTeYAO, T; FUJIMOTO, M; UESUGI, K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 823-827, issn 0022-0248, 2Conference Paper

Structural and transport properties of InAs/AlSb superlatticesCHOW, D. H; ZHANG, Y. H; MILES, R. H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 879-882, issn 0022-0248, 2Conference Paper

Thermal stability of nitrogen-doped ZnSe growth by molecular beam epitaxyNISHIKAWA, Y; ISHIKAWA, M; PARBROOK, P. J et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 807-811, issn 0022-0248, 2Conference Paper

Use of molecular beam epitaxy for high-power AlGaAs laser productionCHALY, V. P; DEMIDOV, D. M; FOKIN, G. A et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1350-1353, issn 0022-0248, 2Conference Paper

Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxyWECKWERTH, M. V; HUNG, C. Y; PAO, Y. C et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1150-1153, issn 0022-0248, 2Conference Paper

GaN growth by a controllable RF-excited nitrogen sourceVAN HOVE, J. M; COSIMINI, G. J; NELSON, E et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 908-911, issn 0022-0248, 2Conference Paper

Kinetics of arsenic doping in silicon by ultra-high-vacuum chemical vapor depositionSUGIYAMA, N; IMAI, S; KAWAGUCHI, Y et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 994-998, issn 0022-0248, 2Conference Paper

Li-acceptor doping in ZnS/GaAs by post-heated molecular beam epitaxyYONETA, M; SAITO, H; OHISHI, MP et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 817-822, issn 0022-0248, 2Conference Paper

Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb₄MARX, D; MIYAMOTO, K; ASAHI, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 874-878, issn 0022-0248, 2Conference Paper

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azideOBERMAN, D. B; LEE, H; GÖTZ, W. K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 912-915, issn 0022-0248, 2Conference Paper